MOSFET 60V, 54A, Single N- Channel Power MOSFET
Products specifications
Id - Continuous Drain Current | 54 A |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 60 V |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Pd - Power Dissipation | 69 W |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 36.5 nC |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Packaging | Cut Tape, MouseReel, Reel |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Rds On - Drain-Source Resistance | 9.6 mOhms |