MOSFET 60V, 54A, Single N- Channel Power MOSFET
Products specifications
Number of Channels | 1 Channel |
Packaging | Reel |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 37 nC |
Id - Continuous Drain Current | 70 A |
Configuration | Single |
Vgs - Gate-Source Voltage | 10 V |
Technology | Si |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 9.7 mOhms |
Vds - Drain-Source Breakdown Voltage | 60 V |
Pd - Power Dissipation | 125 W, 2.6 W |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |