TSM110NB04CR RLG

MOSFETs 40V, 54A, Single N-Channel Power MOSFET

SKU: TSM110NB04CR RLG

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MOSFETs 40V, 54A, Single N-Channel Power MOSFET

Products specifications

Qg - Gate Charge	23 nC
Technology	Si
Pd - Power Dissipation	68 W
Vgs th - Gate-Source Threshold Voltage	2 V
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	20 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	11 mOhms
Vds - Drain-Source Breakdown Voltage	40 V
Maximum Operating Temperature	+ 175 C
Configuration	Single
Channel Mode	Enhancement
Id - Continuous Drain Current	54 A
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 55 C

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Products specifications

Qg - Gate Charge	23 nC
Technology	Si
Pd - Power Dissipation	68 W
Vgs th - Gate-Source Threshold Voltage	2 V
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	20 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	11 mOhms
Vds - Drain-Source Breakdown Voltage	40 V
Maximum Operating Temperature	+ 175 C
Configuration	Single
Channel Mode	Enhancement
Id - Continuous Drain Current	54 A
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 55 C