MOSFET 650V, 10A, Single N-Channel Power MOSFET
Products specifications
Pd - Power Dissipation | 45 W |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Rds On - Drain-Source Resistance | 750 mOhms |
Configuration | Single |
Id - Continuous Drain Current | 10 A |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 34 nC |
Vds - Drain-Source Breakdown Voltage | 650 V |
Packaging | Reel |
Technology | Si |