MOSFET 800V 10Amp N channel Mosfet
Products specifications
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Packaging | Reel |
Pd - Power Dissipation | 290 W |
Vds - Drain-Source Breakdown Voltage | 800 V |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 900 mOhms |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 53 nC |
Technology | Si |
Id - Continuous Drain Current | 9.5 A |
Configuration | Single |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |