MOSFET 800V 10A N Channel Power Mosfet
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 900 mOhms |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 53 nC |
Packaging | Tube |
Mounting Style | Through Hole |
Technology | Si |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 800 V |
Id - Continuous Drain Current | 9.5 A |