MOSFET 55V 100Amp N channel Mosfet
Products specifications
Mounting Style | Through Hole |
Qg - Gate Charge | 81 nC |
Configuration | Single |
Id - Continuous Drain Current | 14 A |
Packaging | Cut Tape, Reel |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Pd - Power Dissipation | 167 W |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Technology | Si |
Rds On - Drain-Source Resistance | 5.7 mOhms |