MOSFETs 30V, 50A, Single N-Channel Power MOSFET
Lead Time: 98 Days
Products specifications
Rds On - Drain-Source Resistance | 7.5 mOhms |
Packaging | Cut Tape, Reel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Configuration | Single |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 50 A |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 40 W |
Technology | Si |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 7.7 nC |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Vgs - Gate-Source Voltage | 10 V |