MOSFET 30V 55Amp N channel Mosfet
Products specifications
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 7.5 mOhms |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Technology | Si |
Qg - Gate Charge | 7.5 nC |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 40 W |
Id - Continuous Drain Current | 55 A |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Packaging | Cut Tape, Reel |