MOSFET 80V 67Amp 8,9mohm N channel Mosfet
Products specifications
Id - Continuous Drain Current | 12 A |
Vds - Drain-Source Breakdown Voltage | 80 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Technology | Si |
Pd - Power Dissipation | 83 W |
Configuration | Single |
Channel Mode | Enhancement |
Packaging | Cut Tape, Reel |
Rds On - Drain-Source Resistance | 6.4 mOhms |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 90 nC |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |