MOSFETs 30V 66A Single N-Cha nnel Power MOSFET
Lead Time: 0 Days
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Pd - Power Dissipation | 44.6 W |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Rds On - Drain-Source Resistance | 4.8 mOhms |
Packaging | Cut Tape, MouseReel, Reel |
Channel Mode | Enhancement |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 19.3 nC |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 66 A |
Transistor Polarity | N-Channel |