MOSFET 30V 80Amp N channel Power Mosfet
Products specifications
Rds On - Drain-Source Resistance | 4.8 mOhms |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Cut Tape, Reel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Technology | Si |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 11.1 nC |
Pd - Power Dissipation | 54 W |
Configuration | Single |
Id - Continuous Drain Current | 80 A |
Vds - Drain-Source Breakdown Voltage | 30 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |