MOSFETs 30V, 30A, Single N-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
Rds On - Drain-Source Resistance | 3.8 mOhms |
Packaging | Cut Tape, Reel |
Qg - Gate Charge | 24 nC |
Vds - Drain-Source Breakdown Voltage | 30 V |
Pd - Power Dissipation | 7 W |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 175 C |
Transistor Polarity | N-Channel |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Configuration | Single |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 30 A |
Technology | Si |