MOSFETs 30V, 90A, Single N-Channel Power MOSFET
Products specifications
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Technology | Si |
Rds On - Drain-Source Resistance | 3.1 mOhms |
Id - Continuous Drain Current | 90 A |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 24 nC |
Channel Mode | Enhancement |
Pd - Power Dissipation | 88 W |
Packaging | Cut Tape, MouseReel, Reel |
Minimum Operating Temperature | - 55 C |