MOSFET Power MOSFET, N-CHAN 30V, 95A, 3.6mOhm
Products specifications
Transistor Polarity | N-Channel |
Qg - Gate Charge | 50 nC |
Pd - Power Dissipation | 83 W |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - Gate-Source Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 3.6 mOhms |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Id - Continuous Drain Current | 124 A |
Technology | Si |