MOSFET Power MOSFET, N-CHL 30V, 129A, 3.3mOhm
Products specifications
Pd - Power Dissipation | 96 W |
Qg - Gate Charge | 31 nC |
Vds - Drain-Source Breakdown Voltage | 30 V |
Technology | Si |
Rds On - Drain-Source Resistance | 3.3 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Vgs - Gate-Source Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 129 A |
Configuration | Single |
Channel Mode | Enhancement |
Packaging | Cut Tape, MouseReel, Reel |