MOSFET 30V, 185A, Single N- Channel Power MOSFET
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 56 nC |
Configuration | Single |
Technology | Si |
Pd - Power Dissipation | 104 W, 2.6 W |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Packaging | Reel |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 185 A |
Rds On - Drain-Source Resistance | 1.5 mOhms |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 30 V |