VEMT3700F-GS08

Phototransistors 70V 100mW 850nm
Lead Time: 28 Days

SKU: VEMT3700F-GS08

Availability: 34210 in stock

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Phototransistors 70V 100mW 850nm
Lead Time: 28 Days

Products specifications

Maximum On-State Collector Current	50 mA
Collector-Emitter Breakdown Voltage	70 V
Maximum Operating Temperature	+ 100 C
Pd - Power Dissipation	100 mW
Fall Time	2 us
Collector- Emitter Voltage VCEO Max	70 V
Minimum Operating Temperature	- 40 C
Collector-Emitter Saturation Voltage	0.15 V
Rise Time	6 us
Peak Wavelength	850 nm
Series	VEMT
Product	Phototransistors
Dark Current	200 nA

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Products specifications

Maximum On-State Collector Current	50 mA
Collector-Emitter Breakdown Voltage	70 V
Maximum Operating Temperature	+ 100 C
Pd - Power Dissipation	100 mW
Fall Time	2 us
Collector- Emitter Voltage VCEO Max	70 V
Minimum Operating Temperature	- 40 C
Collector-Emitter Saturation Voltage	0.15 V
Rise Time	6 us
Peak Wavelength	850 nm
Series	VEMT
Product	Phototransistors
Dark Current	200 nA