Phototransistors T-1 450 to 1080nm +/-25 deg
Lead Time: 70 Days
Products specifications
Fall Time | 2.3 us |
Product | Phototransistors |
Pd - Power Dissipation | 100 mW |
Peak Wavelength | 850 nm |
Rise Time | 2 us |
Maximum On-State Collector Current | 50 mA |
Maximum Operating Temperature | + 100 C |
Minimum Operating Temperature | - 40 C |
Dark Current | 200 nA |
Collector-Emitter Saturation Voltage | 0.3 V |
Collector-Emitter Breakdown Voltage | 70 V |
Collector- Emitter Voltage VCEO Max | 70 V |