Phototransistors TO-18 450-1080nm +/-40 deg
Lead Time: 42 Days
Products specifications
Product | Phototransistors |
Maximum Operating Temperature | + 125 C |
Collector-Emitter Breakdown Voltage | 70 V |
Mounting Style | Through Hole |
Pd - Power Dissipation | 250 mW |
Collector- Emitter Voltage VCEO Max | 80 V |
Dark Current | 100 nA |
Collector-Emitter Saturation Voltage | 0.15 V |
Peak Wavelength | 850 nm |
Maximum On-State Collector Current | 50 mA |
Minimum Operating Temperature | - 40 C |