Phototransistors T-.75 450 to 1040nm +/-12 deg
Lead Time: 42 Days
Products specifications
Collector-Emitter Breakdown Voltage | 32 V |
Product | Phototransistors |
Minimum Operating Temperature | - 40 C |
Peak Wavelength | 825 nm |
Dark Current | 200 nA |
Maximum Operating Temperature | + 100 C |
Mounting Style | Through Hole |
Collector- Emitter Voltage VCEO Max | 32 V |
Collector-Emitter Saturation Voltage | 0.3 V |
Pd - Power Dissipation | 100 mW |
Maximum On-State Collector Current | 50 mA |