MOSFET 240V 0.2A 0.36W 4.0ohms @ 10V
Products specifications
Vds - Drain-Source Breakdown Voltage | 257 V |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Packaging | Cut Tape, MouseReel, Reel |
Qg - Gate Charge | 4.87 nC |
Vgs th - Gate-Source Threshold Voltage | 1.65 V |
Rds On - Drain-Source Resistance | 2.2 Ohms |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Tradename | TrenchFET |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Configuration | Single |
Channel Mode | Enhancement |
Pd - Power Dissipation | 360 mW |
Id - Continuous Drain Current | 200 mA |