MOSFETs 60V 90A 250W 9.3mohm @ 10V
Lead Time: 91 Days
Products specifications
Qg - Gate Charge | 240 nC |
Transistor Polarity | P-Channel |
Vgs - Gate-Source Voltage | 20 V |
Technology | Si |
Packaging | Tube |
Rds On - Drain-Source Resistance | 7.4 mOhms |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Tradename | TrenchFET |
Mounting Style | Through Hole |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 90 A |
Maximum Operating Temperature | + 175 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Pd - Power Dissipation | 250 W |