SUP90N06-6M0P-E3

MOSFET 60V 90A 272W 6.0mohm @ 10V

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MOSFETs 60V 90A 272W 6.0mohm @ 10V
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Products specifications

Vgs - Gate-Source Voltage	20 V
Packaging	Tube
Configuration	Single
Id - Continuous Drain Current	90 A
Mounting Style	Through Hole
Tradename	TrenchFET
Vds - Drain-Source Breakdown Voltage	60 V
Technology	Si
Qg - Gate Charge	120 nC
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2.5 V
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	272 W
Maximum Operating Temperature	+ 175 C
Rds On - Drain-Source Resistance	5 mOhms
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Vgs - Gate-Source Voltage	20 V
Packaging	Tube
Configuration	Single
Id - Continuous Drain Current	90 A
Mounting Style	Through Hole
Tradename	TrenchFET
Vds - Drain-Source Breakdown Voltage	60 V
Technology	Si
Qg - Gate Charge	120 nC
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2.5 V
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	272 W
Maximum Operating Temperature	+ 175 C
Rds On - Drain-Source Resistance	5 mOhms
Transistor Polarity	N-Channel
Number of Channels	1 Channel