SUP90N06-05L-E3

MOSFET 60V 90A 300W 4.9mohm @ 10V

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R 68.78

R 67.20

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MOSFETs 60V 90A 300W 4.9mohm @ 10V

Products specifications

Transistor Polarity	N-Channel
Qg - Gate Charge	300 nC
Technology	Si
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	60 V
Mounting Style	Through Hole
Id - Continuous Drain Current	90 A
Rds On - Drain-Source Resistance	3.9 mOhms
Pd - Power Dissipation	300 W
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	1 V
Packaging	Tube
Maximum Operating Temperature	+ 175 C
Tradename	TrenchFET
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Configuration	Single

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Products specifications

Transistor Polarity	N-Channel
Qg - Gate Charge	300 nC
Technology	Si
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	60 V
Mounting Style	Through Hole
Id - Continuous Drain Current	90 A
Rds On - Drain-Source Resistance	3.9 mOhms
Pd - Power Dissipation	300 W
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	1 V
Packaging	Tube
Maximum Operating Temperature	+ 175 C
Tradename	TrenchFET
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Configuration	Single