SUP85N15-21-E3

MOSFET 150V 85A 300W 21mohm @ 10V

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MOSFETs 150V 85A 300W 21mohm @ 10V
Lead Time: 147 Days

Products specifications

Configuration	Single
Packaging	Tube
Tradename	TrenchFET
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	300 W
Rds On - Drain-Source Resistance	17.5 mOhms
Technology	Si
Qg - Gate Charge	110 nC
Number of Channels	1 Channel
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	150 V
Id - Continuous Drain Current	85 A
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Maximum Operating Temperature	+ 175 C

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Products specifications

Configuration	Single
Packaging	Tube
Tradename	TrenchFET
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	300 W
Rds On - Drain-Source Resistance	17.5 mOhms
Technology	Si
Qg - Gate Charge	110 nC
Number of Channels	1 Channel
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	150 V
Id - Continuous Drain Current	85 A
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Maximum Operating Temperature	+ 175 C