SUP85N10-10-GE3

MOSFET 100V 85A 250W 10.5mohm @ 10V

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R 101.72

R 93.02

R 82.22

R 80.90

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MOSFETs 100V 85A 250W 10.5mohm @ 10V
Lead Time: 91 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Rds On - Drain-Source Resistance	8.5 mOhms
Packaging	Tube
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Tradename	TrenchFET
Channel Mode	Enhancement
Pd - Power Dissipation	250 W
Mounting Style	Through Hole
Configuration	Single
Maximum Operating Temperature	+ 175 C
Id - Continuous Drain Current	85 A
Technology	Si
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	100 V
Qg - Gate Charge	160 nC

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Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Rds On - Drain-Source Resistance	8.5 mOhms
Packaging	Tube
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Tradename	TrenchFET
Channel Mode	Enhancement
Pd - Power Dissipation	250 W
Mounting Style	Through Hole
Configuration	Single
Maximum Operating Temperature	+ 175 C
Id - Continuous Drain Current	85 A
Technology	Si
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	100 V
Qg - Gate Charge	160 nC