SUP85N10-10-E3

MOSFET RECOMMENDED ALT 781-SUP85N10-10-E3

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R 117.79

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R 80.90

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MOSFETs TO220 100V 85A N-CH MOSFET
Lead Time: 91 Days

Products specifications

Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	250 W
Qg - Gate Charge	160 nC
Id - Continuous Drain Current	85 A
Rds On - Drain-Source Resistance	8.5 mOhms
Maximum Operating Temperature	+ 175 C
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si
Vgs th - Gate-Source Threshold Voltage	1 V
Channel Mode	Enhancement
Tradename	TrenchFET
Configuration	Single
Minimum Operating Temperature	- 55 C

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Products specifications

Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	250 W
Qg - Gate Charge	160 nC
Id - Continuous Drain Current	85 A
Rds On - Drain-Source Resistance	8.5 mOhms
Maximum Operating Temperature	+ 175 C
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si
Vgs th - Gate-Source Threshold Voltage	1 V
Channel Mode	Enhancement
Tradename	TrenchFET
Configuration	Single
Minimum Operating Temperature	- 55 C