SUP57N20-33-E3

MOSFET 200V 57A 300W

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R 79.85

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R 58.76

R 57.18

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MOSFETs 200V 57A 300W
Lead Time: 91 Days

Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Packaging	Tube
Mounting Style	Through Hole
Configuration	Single
Technology	Si
Minimum Operating Temperature	- 55 C
Tradename	TrenchFET
Pd - Power Dissipation	300 W
Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	57 A
Maximum Operating Temperature	+ 175 C
Qg - Gate Charge	130 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	27 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	20 V

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Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Packaging	Tube
Mounting Style	Through Hole
Configuration	Single
Technology	Si
Minimum Operating Temperature	- 55 C
Tradename	TrenchFET
Pd - Power Dissipation	300 W
Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	57 A
Maximum Operating Temperature	+ 175 C
Qg - Gate Charge	130 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	27 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	20 V