SUP53P06-20-E3

MOSFET 60V 53A 104.2W 19.5mohm @ 10V

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MOSFETs 60V 53A 104.2W 19.5mohm @ 10V
Lead Time: 91 Days

Products specifications

Id - Continuous Drain Current	53 A
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	60 V
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	115 nC
Rds On - Drain-Source Resistance	16 mOhms
Technology	Si
Packaging	Tube
Transistor Polarity	P-Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Mounting Style	Through Hole
Pd - Power Dissipation	104.2 W
Configuration	Single
Tradename	TrenchFET
Channel Mode	Enhancement

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Products specifications

Id - Continuous Drain Current	53 A
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	60 V
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	115 nC
Rds On - Drain-Source Resistance	16 mOhms
Technology	Si
Packaging	Tube
Transistor Polarity	P-Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Mounting Style	Through Hole
Pd - Power Dissipation	104.2 W
Configuration	Single
Tradename	TrenchFET
Channel Mode	Enhancement