SUP40N25-60-E3

MOSFET 250V 40A 300W 60mohm @ 10V

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MOSFETs 250V 40A 300W 60mohm @ 10V
Lead Time: 147 Days

Products specifications

Packaging	Tube
Technology	Si
Vds - Drain-Source Breakdown Voltage	250 V
Vgs - Gate-Source Voltage	30 V
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Rds On - Drain-Source Resistance	49 mOhms
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	140 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Id - Continuous Drain Current	40 A
Pd - Power Dissipation	300 W
Configuration	Single
Maximum Operating Temperature	+ 175 C

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Products specifications

Packaging	Tube
Technology	Si
Vds - Drain-Source Breakdown Voltage	250 V
Vgs - Gate-Source Voltage	30 V
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Rds On - Drain-Source Resistance	49 mOhms
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	140 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Id - Continuous Drain Current	40 A
Pd - Power Dissipation	300 W
Configuration	Single
Maximum Operating Temperature	+ 175 C