MOSFETs 60V 55A 125W
Lead Time: 91 Days
Products specifications
Technology | Si |
Channel Mode | Enhancement |
Tradename | TrenchFET |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Pd - Power Dissipation | 125 W |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 175 C |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 76 nC |
Rds On - Drain-Source Resistance | 19 mOhms |
Packaging | Cut Tape, MouseReel, Reel |
Id - Continuous Drain Current | 55 A |
Transistor Polarity | P-Channel |
Vgs - Gate-Source Voltage | 10 V |