SUM110P08-11L-E3

MOSFET 80V 110A 375W

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MOSFETs 80V 110A 375W
Lead Time: 91 Days

Products specifications

Rds On - Drain-Source Resistance	11.2 mOhms
Maximum Operating Temperature	+ 175 C
Configuration	Single
Vgs - Gate-Source Voltage	10 V
Pd - Power Dissipation	375 W
Vds - Drain-Source Breakdown Voltage	80 V
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Tradename	TrenchFET
Vgs th - Gate-Source Threshold Voltage	1 V
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	180 nC
Channel Mode	Enhancement
Id - Continuous Drain Current	110 A
Technology	Si

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Products specifications

Rds On - Drain-Source Resistance	11.2 mOhms
Maximum Operating Temperature	+ 175 C
Configuration	Single
Vgs - Gate-Source Voltage	10 V
Pd - Power Dissipation	375 W
Vds - Drain-Source Breakdown Voltage	80 V
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Tradename	TrenchFET
Vgs th - Gate-Source Threshold Voltage	1 V
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	180 nC
Channel Mode	Enhancement
Id - Continuous Drain Current	110 A
Technology	Si