SUM110P06-08L-E3

MOSFET 60V 110A 272W 8.0mohm @ 10V

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MOSFETs 60V 110A 272W 8.0mohm @ 10V
Lead Time: 91 Days

Products specifications

Minimum Operating Temperature	- 55 C
Transistor Polarity	P-Channel
Id - Continuous Drain Current	110 A
Technology	Si
Rds On - Drain-Source Resistance	8 mOhms
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C
Vds - Drain-Source Breakdown Voltage	60 V
Tradename	TrenchFET
Configuration	Single
Pd - Power Dissipation	272 W
Channel Mode	Enhancement
Qg - Gate Charge	160 nC
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	1 V

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Products specifications

Minimum Operating Temperature	- 55 C
Transistor Polarity	P-Channel
Id - Continuous Drain Current	110 A
Technology	Si
Rds On - Drain-Source Resistance	8 mOhms
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C
Vds - Drain-Source Breakdown Voltage	60 V
Tradename	TrenchFET
Configuration	Single
Pd - Power Dissipation	272 W
Channel Mode	Enhancement
Qg - Gate Charge	160 nC
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	1 V