SUM110N10-09-E3

MOSFET 100V 110A 375W

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R 77.21

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MOSFETs 100V 110A 375W
Lead Time: 91 Days

Products specifications

Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	10 V
Pd - Power Dissipation	375 W
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	9.5 mOhms
Packaging	Cut Tape, MouseReel, Reel
Configuration	Single
Tradename	TrenchFET
Vgs th - Gate-Source Threshold Voltage	2 V
Id - Continuous Drain Current	110 A
Qg - Gate Charge	110 nC
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si

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Products specifications

Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	10 V
Pd - Power Dissipation	375 W
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	9.5 mOhms
Packaging	Cut Tape, MouseReel, Reel
Configuration	Single
Tradename	TrenchFET
Vgs th - Gate-Source Threshold Voltage	2 V
Id - Continuous Drain Current	110 A
Qg - Gate Charge	110 nC
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si