MOSFETs 100V 37A 136W 43mohm @ 10V
Lead Time: 91 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 100 V |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Configuration | Single |
Pd - Power Dissipation | 136 W |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 10 V |
Transistor Polarity | P-Channel |
Channel Mode | Enhancement |
Tradename | TrenchFET |
Rds On - Drain-Source Resistance | 43 mOhms |
Id - Continuous Drain Current | 37.1 A |
Maximum Operating Temperature | + 175 C |
Qg - Gate Charge | 106 nC |
Number of Channels | 1 Channel |