SUD50P08-25L-E3

MOSFET 80V 50A 136W 25.2mohm @ 10V

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R 40.06

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R 29.25

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MOSFETs 80V 50A 136W 25.2mohm @ 10V
Lead Time: 91 Days

Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	80 V
Qg - Gate Charge	105 nC
Vgs th - Gate-Source Threshold Voltage	1 V
Technology	Si
Vgs - Gate-Source Voltage	10 V
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	25.2 mOhms
Tradename	TrenchFET
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	50 A
Configuration	Single
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	136 W

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Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	80 V
Qg - Gate Charge	105 nC
Vgs th - Gate-Source Threshold Voltage	1 V
Technology	Si
Vgs - Gate-Source Voltage	10 V
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	25.2 mOhms
Tradename	TrenchFET
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	50 A
Configuration	Single
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	136 W