MOSFETs 40V 50A 136W 9.4mohm @ 10V
Lead Time: 0 Days
Products specifications
Minimum Operating Temperature | - 55 C |
Transistor Polarity | P-Channel |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Pd - Power Dissipation | 136 W |
Channel Mode | Enhancement |
Qg - Gate Charge | 102 nC |
Packaging | Cut Tape, MouseReel, Reel |
Maximum Operating Temperature | + 175 C |
Tradename | TrenchFET |
Rds On - Drain-Source Resistance | 9.4 mOhms |
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs - Gate-Source Voltage | 10 V |
Id - Continuous Drain Current | 50 A |
Configuration | Single |
Number of Channels | 1 Channel |