MOSFET 40V 50A 48.1W 8.8mohm @ 10V
Products specifications
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Cut Tape, MouseReel, Reel |
Id - Continuous Drain Current | 50 A |
Rds On - Drain-Source Resistance | 8 mOhms |
Qg - Gate Charge | 37 nC |
Tradename | TrenchFET |
Channel Mode | Enhancement |
Pd - Power Dissipation | 48.1 W |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |