SUD40N10-25-E3

MOSFET RECOMMENDED ALT 781-SUD35N10-26P-GE3

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R 49.28

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R 41.37

R 37.95

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MOSFETs RECOMMENDED ALT SUD3
Lead Time: 91 Days

Products specifications

Channel Mode	Enhancement
Technology	Si
Tradename	TrenchFET
Maximum Operating Temperature	+ 175 C
Vds - Drain-Source Breakdown Voltage	100 V
Vgs th - Gate-Source Threshold Voltage	1 V
Pd - Power Dissipation	136 W
Id - Continuous Drain Current	40 A
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	25 mOhms
Vgs - Gate-Source Voltage	10 V
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Qg - Gate Charge	40 nC

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Products specifications

Channel Mode	Enhancement
Technology	Si
Tradename	TrenchFET
Maximum Operating Temperature	+ 175 C
Vds - Drain-Source Breakdown Voltage	100 V
Vgs th - Gate-Source Threshold Voltage	1 V
Pd - Power Dissipation	136 W
Id - Continuous Drain Current	40 A
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	25 mOhms
Vgs - Gate-Source Voltage	10 V
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Qg - Gate Charge	40 nC