Tradename | TrenchFET |
Rds On - Drain-Source Resistance | 16 mOhms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Maximum Operating Temperature | + 175 C |
Vds - Drain-Source Breakdown Voltage | 80 V |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 10 V |
Configuration | Single |
Packaging | Cut Tape, MouseReel, Reel |
Channel Mode | Enhancement |
Qg - Gate Charge | 42 nC |
Id - Continuous Drain Current | 40 A |
Technology | Si |
Pd - Power Dissipation | 136 W |