MOSFET 60V 19A 38.5W 60mohm @ 10V
Products specifications
Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 26 nC |
Id - Continuous Drain Current | 18.3 A |
Transistor Polarity | P-Channel |
Vgs - Gate-Source Voltage | 10 V |
Configuration | Single |
Rds On - Drain-Source Resistance | 60 mOhms |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 38.5 W |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 60 V |
Tradename | TrenchFET |
Packaging | Cut Tape, MouseReel, Reel |
Technology | Si |