MOSFET -100V 195mOhms@ 10V -8.8A
Products specifications
Configuration | Single |
Qg - Gate Charge | 23.2 nC |
Id - Continuous Drain Current | 8.8 A |
Pd - Power Dissipation | 32.1 W |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 100 V |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 195 mOhms |
Transistor Polarity | P-Channel |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, MouseReel, Reel |
Tradename | TrenchFET |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |