MOSFETs 60V 0.24A
Lead Time: 63 Days
Products specifications
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Qg - Gate Charge | 0.6 nC |
Rds On - Drain-Source Resistance | 3 Ohms |
Technology | Si |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 60 V |
Pd - Power Dissipation | 350 mW |
Packaging | Cut Tape, MouseReel, Reel |
Configuration | Single |
Id - Continuous Drain Current | 240 mA |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Vgs - Gate-Source Voltage | 4.5 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |