IGBT Modules Output & SW Modules - DIAP IGBT
Products specifications
Continuous Collector Current at 25 C | 500 A |
Configuration | Half Bridge |
Gate-Emitter Leakage Current | 400 nA |
Maximum Operating Temperature | + 150 C |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Pd - Power Dissipation | 1.645 kW |
Collector-Emitter Saturation Voltage | 2 V |