IGBT Modules Output & SW Modules - DIAP IGBT
Products specifications
Maximum Operating Temperature | + 150 C |
Configuration | Half Bridge |
Collector-Emitter Saturation Voltage | 3.1 V |
Pd - Power Dissipation | 1.316 kW |
Gate-Emitter Leakage Current | 400 nA |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Continuous Collector Current at 25 C | 330 A |