IGBT Modules Output & SW Modules - DIAP IGBT
Products specifications
Maximum Operating Temperature | + 150 C |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Pd - Power Dissipation | 1.136 kW |
Collector-Emitter Saturation Voltage | 1.9 V |
Continuous Collector Current at 25 C | 360 A |
Gate-Emitter Leakage Current | 400 nA |
Configuration | Half Bridge |