IGBT Modules Output & SW Modules - DIAP IGBT
Products specifications
Continuous Collector Current at 25 C | 420 A |
Minimum Operating Temperature | - 40 C |
Collector-Emitter Saturation Voltage | 1.8 V |
Gate-Emitter Leakage Current | 400 nA |
Pd - Power Dissipation | 1.562 kW |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Maximum Operating Temperature | + 150 C |