IGBT Modules Output & SW Modules - DIAP IGBT
Products specifications
Gate-Emitter Leakage Current | 400 nA |
Collector-Emitter Saturation Voltage | 2.07 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 40 C |
Pd - Power Dissipation | 1.562 kW |
Continuous Collector Current at 25 C | 370 A |
Collector- Emitter Voltage VCEO Max | 1.2 kV |