IGBT Modules Output & SW Modules - DIAP IGBT
Products specifications
Collector-Emitter Saturation Voltage | 1.9 V |
Collector- Emitter Voltage VCEO Max | 600 V |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 150 C |
Continuous Collector Current at 25 C | 260 A |
Pd - Power Dissipation | 1.042 kW |
Gate-Emitter Leakage Current | 400 nA |
Configuration | Half Bridge |